Method of laser annealing a subsurface region in a semiconductor

摘要

A method for annealing an ion implanted region (14) buried in a semiconductor substrate (10) without the undesirable effects of thermal diffusion, which includes the radiation of the substrate by a continuous laser having an emission wavelength longer than 600 nm which the buried ion implanted region will absorb strongly but which will be substantially unabsorbed by the unimplanted regions.;Results can be improved when the substrate is heated to approximately 300°C during this laser annealing.