RAMAN SCATTERING FROM SUBSURFACE REGIONS OF SEMICONDUCTORS.

摘要

Raman scattering as a technique for studying the chemical and electrical properties of semiconductors was explored in this thesis. It was used to study the variation of surface band bending with the chemistry of surface treatment and the resuts were compared with previous work using high vacuum techniques. The temperature dependence of the plasmon in n-type GaAs was measured and described by the statistical physics of carriers in semiconductors. Further work involved an analysis of surface chemical species known to be present during oxidation. Here, the dynamics of the growth of As crystals on the GaAs surface was determined and certain reaction barrier energies measured for this process.