Vapour-phase epitaxial growth process

摘要

A process for forming a vapor-phase epitaxial growth layer on a silicon wafer having a buried layer of a high As or B concentration. This vapor-phase epi­taxial growth process is performed in two steps of (i) performing a vapor-phase epitaxial growth at a relati­vely low temperature by using a reaction gas containing at least one kind selected from a group consisting of SiHxF4-x (x = 0 to 3) and Si₂HxF6-x (x = 0-5) and at least one kind selected from a group consisting of SiH₄ and Si₂H₆, and (ii) performing a vapor-phase epitaxial growth under a condition which allows a higher growth rate that in the step (i) by using a reaction gas con­taining SiH₄ or Si₂H₆ which may or may not be accom­panied with silane fluoride.