IC CHIPS WITH SELF-ALIGNED THIN FILM RESISTORS

摘要

The present invention relates to a method of manufacturing an IC chip with thin film resistors, as well as integrated circuit chips manufactured by such a process. In said method, a chip substrate is first coated with thin film of wiring material layers (with an intermediate barrier layer if needed), these layers are etched in predetermined regions according to the interconnect structure metal, the remaining layer material being vertically aligned, and then on a section of the remaining material, the interconnect material (and the barrier material if any) is attacked, thus exposing the material in a thin layer so as to form a thin film resistor aligned adjacent sections of interconnecting conductors. The material in the predetermined regions can be attacked by dry (plasma) or wet.