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Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance

机译:具有高电阻和低温电阻系数的薄膜芯片电阻器

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High resistance thin film chip resistors(0603 type)were studied,and the specifications are as follows:1 kΩ with tolerance about±0.1% after laser trimming and temperature coefficient of resistance(TCR)less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(seem)and 100 W,respectively.The experiment shows that the electrical properties of Cr-Si-Ta-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500℃ for 120 rain.The morphologies of Cr-Si-Ta-Al film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film.
机译:研究了0603型高阻薄膜贴片电阻,其规格如下:1kΩ,激光微调后的公差约为±0.1%,电阻温度系数(TCR)小于±15×10-6 /℃。制备了Cr-Si-Ta-Al薄膜,其氩气流速和溅射功率分别固定在每分钟20标准状态立方厘米和100W。实验表明,Cr-Si-Ta-Al薄膜的电性能当沉积时间为11min左右,且沉积膜在500℃退火120次雨水时,Al沉积膜可以满足0603型薄膜贴片电阻的规格要求。分析表明,Ta和Al可能以几种结构(例如桥状,毛细管状或岛状结构)的混合形式分布在CrSi2薄膜中。 Cr-Si-Ta-Al的高膜电阻和低TCR电影。

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