High resistance thin film chip resistors(0603 type)were studied,and the specifications are as follows:1 kΩ with tolerance about±0.1% after laser trimming and temperature coefficient of resistance(TCR)less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(seem)and 100 W,respectively.The experiment shows that the electrical properties of Cr-Si-Ta-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500℃ for 120 rain.The morphologies of Cr-Si-Ta-Al film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film.
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