METHOD FOR USING ETCHING MASK TO PRODUCE PARTIALLY ETCHED STRUCTURE IN DIRECTIONALLY DETERMINED ETCHING STRUCTURE

摘要

PURPOSE: To etch openings of different depth in a wafer by single step by etching a part of the water anisotropically using an erodable mask material. CONSTITUTION: A first erodable mask layer 18 is formed covering the upper surface of a wafer 10 and patterned to leave the layer 18 at a desired position. A second nonerodable mask layer 22 is then formed thereon covering the first erodable mask layer 18 and patterned to form desired vias, i.e., first via 12 V for terrace 12, second via for V-groove 14 and third via 16 V for through hole 16. When the wafer 10 is immersed into an etching liquid, the etching liquid passes through the water to make through holes 16. Depth and width of the terrace 12 are limited and the terrace 12, V-groove 14 and through hole 16 of desired depth can be obtained by single etching operation.