首页> 外国专利> SINGLE PARTICLE FILM ETCHING MASK AND PRODUCTION METHOD OF SINGLE PARTICLE FILM ETCHING MASK, PRODUCTION METHOD OF MICRO STRUCTURE WITH USE OF SINGLE PARTICLE FILM ETCHING MASK AND MICRO STRUCTURE PRODUCED BY MICRO STRUCTURE PRODUCTION METHOD

SINGLE PARTICLE FILM ETCHING MASK AND PRODUCTION METHOD OF SINGLE PARTICLE FILM ETCHING MASK, PRODUCTION METHOD OF MICRO STRUCTURE WITH USE OF SINGLE PARTICLE FILM ETCHING MASK AND MICRO STRUCTURE PRODUCED BY MICRO STRUCTURE PRODUCTION METHOD

机译:单颗粒膜掩膜和单颗粒膜掩膜的制造方法,使用单颗粒膜掩膜的微结构的制造方法和由微结构产生方法产生的微结构

摘要

A micro structure which is preferred as an original plate of an antireflection, a mold of nano imprint or injection molding is obtained by a single particle film etching mask on which each particle is precisely aligned and closest packed in two dimensions. A single particle film etching mask is produced by a drip step wherein a dispersed liquid in which particles dispersed in a solvent are dripped onto a liquid surface of a water tank, a single particle film formation step in which a single particle film which consists of the particles by volatizing a solvent is formed, and a transfer step in which the single particle film is transferred to a substrate. The single particle film etching mask on which particles are closest packed in two dimensions, has a misalignment D(%) of an array of the particles that is defined by D(%)=|B−A|×100/A being less than or equal to 10%. However, A is the average diameter of the particles, and B is the average pitch between the particles in the single particle film.
机译:通过单颗粒膜蚀刻掩模获得微结构,该微结构优选用作抗反射的原始板,纳米压印模具或注射成型模具,在该单颗粒膜蚀刻掩模上,每个颗粒精确对准并在二维上最紧密地堆积。通过其中将分散在溶剂中的颗粒分散在其中的分散液滴落到水槽的液面上的滴落步骤生产单颗粒膜蚀刻掩模,在单颗粒膜形成步骤中,包括由溶剂组成的单颗粒膜。通过使溶剂挥发而形成颗粒,并且将单个颗粒膜转移至基板的转移步骤。颗粒在二维上最紧密堆积的单颗粒膜蚀刻掩膜,其由D(%)= | BA-×100 / A定义的颗粒阵列的未对准D(%)小于或等于10%。但是,A是粒子的平均直径,B是单粒子膜中的粒子之间的平均间距。

著录项

  • 公开/公告号US2012219759A1

    专利类型

  • 公开/公告日2012-08-30

    原文格式PDF

  • 申请/专利权人 KEI SHINOTSUKA;

    申请/专利号US201213467746

  • 发明设计人 KEI SHINOTSUKA;

    申请日2012-05-09

  • 分类号B32B3/30;B44C1/22;C25D1/10;B29C45/26;B29C45/00;B05C11/00;B29C59/02;

  • 国家 US

  • 入库时间 2022-08-21 17:32:51

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