PNP lateral transistor with NPN device - uses breakdown voltage of parallel NPN device to protect against static electrically

摘要

The PNP lateral transistor has an N+ diffusion layer (20) in the collector region of a PNP transistor, an acceptor n+ layer (11) and n- epictancial layer (12) on a p- substrate (10), a p- diffusion layer (13) for emitter, a p- diffusion layer (14) for a collector, and an n+ diffusion layer (15) for base. The breakdown voltage of the PNP lateral transistor is dependant upon the blocking voltage (collector to emitter) of the NPN transistor. Preferably, the n+ diffusion layer (20) and the p- diffusion layer (14) have common terminal connections. ADVANTAGE - Better protection against static electricity.