首页>
外国专利>
Lateral PNP transistor with improved electrostatic withstand voltage using latch voltage of NPN transistor
Lateral PNP transistor with improved electrostatic withstand voltage using latch voltage of NPN transistor
展开▼
机译:使用NPN晶体管的锁存电压可改善静电耐压的横向PNP晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
The PNP lateral transistor has an N+ diffusion layer (20) in the collector region of a PNP transistor, an acceptor n+ layer (11) and n- epictancial layer (12) on a p- substrate (10), a p- diffusion layer (13) for emitter, a p- diffusion layer (14) for a collector, and an n+ diffusion layer (15) for base. The breakdown voltage of the PNP lateral transistor is dependant upon the blocking voltage (collector to emitter) of the NPN transistor. Preferably, the n+ diffusion layer (20) and the p- diffusion layer (14) have common terminal connections. ADVANTAGE - Better protection against static electricity.
展开▼