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Lateral PNP transistor using a latch voltage of NPN transistor
Lateral PNP transistor using a latch voltage of NPN transistor
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机译:使用NPN晶体管的锁存电压的横向PNP晶体管
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摘要
A lateral PNP transistor having either of the collector or the emitter diffusion layers layered with an n.sup.+ type diffusion layer, is shown. The added layer serves to increase the static electricity withstand stress along a transistor discharging path. A low withstand stress contributes to transistor damage at high breakdown voltages. When an n. sup.+ diffusion layer is formed within a diffusion layer in a lateral PNP transistor the transistor behaves as a combination of two transistors, PNP and NPN, selectively configured.
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