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A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices.

机译：采用45GHz NpN和20GHz pNp器件的新型高性能互补双极技术。

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M C Wilson; P H Osborne; S Thomas; T Cook;
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年度 2015
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1. On the Transient Response of a Complementary (npn src="/images/tex/515.gif" alt="+"> pnp) SiGe HBT BiCMOS Technology [J] . Lourenco N.E., Fleetwood Z.E., Jung S., Nuclear Science, IEEE Transactions on . 2014,第6期

机译：关于互补（npn src =“ / images / tex / 515.gif” alt =“ +”> pnp）的瞬态响应SiGe HBT BiCMOS技术
2. Single Event Transient Hardness of a New Complementary (npn $+$ pnp) SiGe HBT Technology on Thick-Film SOI [J] . Wilcox E. P.Phillips S. D.Cheng P.Thrivikraman T.Madan A.Cressler J. D.Vizkelethy G.Marshall P. W.Marshall C.Babcock J. A.Kruckmeyer K.Eddy E.Cestra G.Zhang B. Nuclear Science, IEEE Transactions on . 2010,第6期

机译：新的互补（npn $ + $ pnp）SiGe HBT技术在厚膜SOI上的单事件瞬态硬度
3. The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology [J] . Diestelhorst R. M., Finn S., Jun B., IEEE Transactions on Nuclear Science . 2007,第6期

机译：X射线和质子辐射对200 GHz / 90 GHz互补$（npn + pnp）$ SiGe：C HBT技术的影响
4. A complementary bipolar technology on SOI featuring 50 GHz NPN and 35 GHz PNP devices for high performance RF applications [C] . Nigrin, S., Wilson, . 2002

机译：SOI上的互补双极技术，具有用于高性能RF应用的50 GHz NPN和35 GHz PNP器件
5. InP-based NPN and PNP heterojunction bipolar transistor design, technology, and characterization for enhanced high-frequency power amplification. [D] . Sawdai, Donald James. 1999

机译：基于InP的NPN和PNP异质结双极晶体管的设计，技术和特性，可增强高频功率放大。
6. High educational performance is a distinctive feature of bipolar disorder; a study on cognition in bipolar disorder schizophrenia patients relatives and controls [O] . Annabel Vreeker, Marco P.M. Boks, Lucija Abramovic, -1

机译：高学历是双相情感障碍的显着特征。躁郁症精神分裂症患者亲戚和对照者的认知研究
7. The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI [O] . Marco Bellini, Bongim Jun, Akil K. Sutton, 2007

机译：质子和X射线照射对厚膜SOI互补（NPN + PNP）SiGE HBT的DC和AC性能的影响

A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices.

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