Semiconductor device with steel dielectric and manufacturing method thereof

摘要

There is a structure of a strong dielectric capacitor C on the source region 23 between the gate electrode 22 and the local oxide film 26. It has a steel dielectric film 29 and an upper electrode 30 and a lower electrode 31 interposed therebetween, and a conductive oxide film 32 is provided between the lower electrode 31 and the source region 23. . The conductive oxide film 32 is ReO ₂ , RuO ₂ , MoO ₂ . Oxygen annealing after the formation of the steel dielectric film 29 for the purpose of improving the crystallinity of the steel dielectric film 29 causes oxygen to enter the conductive oxide film 32, but the conductive oxide film 32 is further oxidized. 32 becomes a so-called oxidation barrier to dummy layer. Therefore, the formation of the silicon oxide film at the source interface hardly occurs, and it is possible to achieve a reduction in contact resistance and avoidance of series parasitic capacitance, an increase in the degree of freedom of the formation area of the capacitor C, and high density integration.