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APPARATUS FOR CONTINUOUS GROWTH OF SIC SINGLE CRYSTAL FROM SIC SYNTHESIZED IN A VAPOR PHASE WITHOUT USING GRAPHITE CRUCIBLE
APPARATUS FOR CONTINUOUS GROWTH OF SIC SINGLE CRYSTAL FROM SIC SYNTHESIZED IN A VAPOR PHASE WITHOUT USING GRAPHITE CRUCIBLE
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机译:在不使用石墨坩埚的情况下从气相合成的SiC连续生长SIC的装置
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摘要
A chamber (10) is divided into a reaction zone (20) and a sublimation zone (30). A gaseous mixture (41) is supplied through a conduit (21) into the reaction zone (20) and heated by a heater (27). The components in the gaseous mixture (41) are reacted with each other to synthesize solid-phase SiC (42). The solid-phase SiC (42) is heated and evaporated by a heater (35), and condensed as a single crystal (43) on a seed crystal attached to a mount base (37). The mount base (37) is rotated and lowered in response to the growth of the SiC single crystal (43) by a rotary shaft (38). Since the SiC single crystal (43) grows from SiC synthesized by the vapor-phase reaction, the obtained product is of very high purity without the substantial inclusion of impurities. In addition, a single crystal having a large diameter or length can be obtained without restrictions imposed by the use of a crucible. IMAGE
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