ORGANIC PRECLEAN FOR IMPROVING VAPOR PHASE WAFER ETCH UNIFORMITY

摘要

A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer (3) surface to remove organics, followed by vapor phase etching. An integrated apparatus (1) for cleaning organic and, subsequently, vapor phase etching, is also described.