Semiconductor component on indium phosphide substrate for DFB laser diode - having no phosphorus in grown layers and relief-like surface of overgrown layer

摘要

Semiconductor component on an InP substrate (1) is claimed in which all grown layers contain no P and an overgrown surface of the substrate has a relief-like structure. USE/ADVANTAGE - Used for a DFB laser diode. The component is function specific and is easy to mfr.