首页> 外国专利> MQW distributed feedback laser for optical communications - has modulators coupled to optical amplifier and built on same indium phosphide substrate with number of epitaxial semiconductor layers and metal electrodes deposited on structure surface

MQW distributed feedback laser for optical communications - has modulators coupled to optical amplifier and built on same indium phosphide substrate with number of epitaxial semiconductor layers and metal electrodes deposited on structure surface

机译:用于光通信的MQW分布式反馈激光器-具有与光放大器耦合的调制器,并构建在同一磷化铟衬底上,并在结构表面上沉积了多个外延半导体层和金属电极

摘要

The IC includes a laser (L) with a modulator (M1) coupled to an optical amplifier (A1) and a second modulator (M2). All four components are obtained on the same indium phosphate substrate (10) doped with N+ ions. Identical epitaxial semiconductor layers are grown on the flat surface of the substrate while a Bragg grating (12) is provided for the laser. A metal layer (26) is deposited on the lower surface of the substrate and connected to earth. A similar layer (24) is provided on the upper surface . The top layer is then etched to provide electrodes for the laser, modulators and amplifier. The etching is followed by a proton implantation.
机译:该IC包括激光器(L),该激光器(L)具有耦合至光放大器(A1)的调制器(M1)和第二调制器(M2)。所有四种组分均在掺杂有N +离子的同一磷酸铟衬底(10)上获得。在衬底的平坦表面上生长相同的外延半导体层,同时为激光器提供布拉格光栅(12)。金属层(26)沉积在基板的下表面上并接地。在上表面上提供了类似的层(24)。然后蚀刻顶层以提供用于激光器,调制器和放大器的电极。蚀刻之后进行质子注入。

著录项

  • 公开/公告号FR2737354A1

    专利类型

  • 公开/公告日1997-01-31

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM;

    申请/专利号FR19950009081

  • 申请日1995-07-26

  • 分类号H01S3/105;H01S3/18;

  • 国家 FR

  • 入库时间 2022-08-22 03:12:15

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号