Quasi substrate for e.g. surface emitting semiconductor laser, has buffer layer sequence provided with layer pairs from semiconductor layers with indium portions that increase from one layer pair to anothe layer pair based on substrate

摘要

The substrate has a buffer layer sequence (2) provided with multitude of layer pairs (9a-9c) from semiconductor layers (3-8) respectively made of indium gallium arsenide. The layers (4, 6, 8) are applied on the layers (3, 5, 7).Indium portions of the layers (3-8) increase from one layer pair to another layer pair based on a substrate (1).The indium portion of the layers (4, 6, 8) in each pair is smaller than the indium portions of the layers (3, 5, 7). The substrate is made of gallium arsenide. The semiconductor layer (8) of the buffer layer sequence is provided with a high lattice constant. An independent claim is also included for an opto-electronic element comprising an radiation-emitting active zone that emits radiation with a wavelength of 1200 nanometer.