PURPOSE: To enable high sensitivity estimation of wafer contamination by a TXRF method, by applying an anode formation process to the mirror surface of a semiconductor silicon wafer, and forming a porous silicon layer on the mirror surface polished wafer. ;CONSTITUTION: A P-type Si (100) wafer 1 is subjected to anode formation in solution represented by a formula HF:C2H5OH=1:1, and a PS layer 2 is formed on the wafer surface. The PS wafer 3 is etched in solution HF/C3H50H/2O, and dipped for 5min in solution (C2H5OH/H2O or C2H5OH/H2O2/H2O base) containing Fe, Ni and Cu of various concentrations (ppt-ppb). Then the PS wafer 3 is taken out and dried. Metal concentration on the PS wafer 3 is measured by using a TXPF method. Thereby wafer contamination of ppt-ppb order caused by trace amounts of metal impurities can be estimated with sensitivity 1 order or more higher than the case of a mirror surface polished wafer, by using the TXRF method.;COPYRIGHT: (C)1994,JPO
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机译：目的：通过对半导体硅晶片的镜面进行阳极形成工艺，并在镜面抛光的晶片上形成多孔硅层，可以通过TXRF方法高灵敏度地估算晶片污染。 ;组成：P型Si（100）晶片1在以HF：C 2 H 5 OH = 1：1表示的溶液中进行阳极形成，在晶片表面上形成PS层2。在溶液HF / C 3 H 5 0H / 2 O中蚀刻PS晶片3，并将其浸入溶液5分钟（C 2 H 5 OH / H 2 O或C 2 H 5 OH / H < Sub> 2 O 2 / H 2 O碱）包含不同浓度（ppt-ppb）的Fe，Ni和Cu。然后取出PS晶片3并干燥。通过使用TXPF方法来测量PS晶片3上的金属浓度。因此，通过使用TXRF方法，可以估算出痕量金属杂质引起的ppt-ppb级晶圆污染，其灵敏度比镜面抛光晶圆的情况高1级或更高。版权所有：（C）1994，JPO
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