Process for determining metallic impurities in a semiconductor wafer comprises subjecting the wafer to an oxidizing hydrogen fluoride-containing atmosphere, making it hydrophobic, applying an etching solution to the surface, and analyzing

摘要

Process for determining metallic impurities in a semiconductor wafer comprises subjecting the wafer to an oxidizing HF-containing atmosphere or an oxidizing atmosphere followed by an HF-containing atmosphere; making it hydrophobic; applying an etching solution to the surface; and analyzing. Preferred Features: The wafer is subjected to oxidizing HF-containing atmosphere for 10 seconds to 5 hours. The etching solution contains HF and H2O2. The wafer is rotated at 0.5-100 U/minute.