FORMATION OF EPITAXIAL GROWTH LAYER ON INSULATING LAYER AND SILICON WAFER HAVING EPITAXIAL GROWTH LAYER ON INSULATING LAYER

摘要

PURPOSE: To obtain an SOI wafer in which the device forming layer has uniform characteristics. ;CONSTITUTION: A layer 4 for forming a device is grown epitaxialy on a silicon oxide 3 deposited on an SOI wafer. This structure enhances uniformity in the characteristics of epitaxial growth layer 4 as compared with a conventional wafer thus enhancing uniformity in the characteristics of device forming layer.;COPYRIGHT: (C)1995,JPO