Etching solution and etching method for semiconductors and method for evaluating GaAs surface

摘要

An etchant includes a mixture of an organic acid, hydrogen peroxide, and a base added to adjust the pH. The etching solution has an eminent difference in the etching rates between GaAs and AlGaAs, GaAs and InGaAs, AlGaAs and InGaAs, InGaAs and AlGaAs, and InGaAs and GaAs. High selectivity etching is completed easily and with high precision. Precise control of etching of a heterostructure is achieved.