Method for evaluating, monitoring or controlling the efficiency, stability, or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer

摘要

A method for evaluating, monitoring or controlling the efficiency, stability or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer wherein:PPa chemical solution containing hydrogen peroxide as well as a complexing or chelating agent for contaminants present in the solution is used for oxidation, dissolution, etching or stripping a semiconductor wafer surface;P Pa measurement of the hydrogen peroxide decomposition is performed in situ in the solution;PPthe measurement of the H.sub.2 O.sub.2 decomposition is used to provide information concerning the behavior of the complexing or chelating agent.