Well forming method of highly integrated semiconductor device

摘要

In a method of manufacturing a highly integrated semiconductor device, a method of effectively forming a well of a semiconductor device by eliminating a high energy ion implantation process is disclosed. The present invention provides a method for fabricating a highly integrated semiconductor device, in which wells for forming transistors of a predetermined conductivity type constituting the semiconductor device are excluded from a high energy level well ion implantation process, and a punchthrough stopper and a channel are provided. It is characterized in that it is formed by a field ion implantation process of the medium energy (Medium Energy) level that simultaneously performs a stop role.