首页> 外国专利> Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor

Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor

机译:功率半导体开关器件,功率转换器,集成电路组件,集成电路,功率电流开关方法,形成功率半导体开关器件的方法,功率转换方法,功率半导体开关器件封装方法以及形成功率晶体管的方法

摘要

Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor are described. One exemplary aspect provides a power semiconductor device including a semiconductive substrate having a surface; and a power transistor having a planar configuration and comprising a plurality of electrically coupled sources and a plurality of electrically coupled drains formed using the semiconductive substrate and adjacent the surface.
机译:描述了功率半导体开关器件,功率转换器,集成电路组件,集成电路,功率电流开关方法,形成功率半导体开关器件的方法,功率转换方法,功率半导体开关器件封装方法以及形成功率晶体管的方法。一个示例性方面提供了一种功率半导体器件,该功率半导体器件包括具有表面的半导体衬底。功率晶体管具有平面结构,并且包括多个电耦合的源极和多个电耦合的漏极,该多个电耦合的源极和多个电耦合的漏极使用该半导体衬底并邻近该表面形成。

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