Method for restoring the resistance of indium oxide semiconductors after heatingwhile in sealed structures

摘要

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers (18) are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer (18) to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer (18) to a temperature between 100 DEG C and 300 DEG C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer (24).