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Indium Gallium Oxide Alloys: Electronic Structure Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

机译：氧化铟氧化物合金：电子结构光学间隙，表面空间电荷和普通阳离子半导体内的化学趋势

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1. Liquid gallium and the eutectic gallium indium (EGaln) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides [J] . Daniel Morales, Nicholas A. Stoute, Zhiyuan Yu, Applied Physics Letters . 2016,第9期

机译：液态镓和共晶铟镓（EGaln）合金：通过电化学还原表面氧化物，介电函数从1.24到3.1 eV
2. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects [J] . de Meux A. de Jamblinne, Pourtois G., Genoe J., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015,第43期

机译：非晶铟与晶体铟镓锌氧化物半导体的电子结构比较：结构，尾态和应变效应
3. Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium-Zinc Oxide Semiconductor Thin Films [J] . Marc Haming, Alexander Issanin, Daniel Walker The journal of physical chemistry, C. Nanomaterials and interfaces . 2014,第24期

机译：溶液处理的铟锌氧化物半导体薄膜的化学，电子和电荷传输性质之间的相互关系
4. Low Power 6.0-Inch Extended Graphics Array Reflective Liquid Crystal Display using Indium Gallium Zinc Oxide Semiconductor with Electronic Paper Function [C] . Makoto Kaneyasu, Hiroyuki Miyake, Takeshi Nishi, 2011 International conference on semiconductor technology for ultra large scale integrated circuits and thin film transistors (ULSIC vs. TFT) . 2011

机译：使用具有电子纸功能的铟镓锌氧化物半导体的低功耗6.0英寸扩展图形阵列反射液晶显示器
5. III-VI semiconductors and oxides: Electronic structure, surface morphology, and transition metal doping of gallium selenide, indium selenide, and gallium oxide. [D] . Lovejoy, Tracy Clark. 2010

机译：III-VI半导体和氧化物：硒化镓，硒化铟和氧化镓的电子结构，表面形态和过渡金属掺杂。
6. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor Bi2O2Se [O] . Cheng Chen, Meixiao Wang, Jinxiong Wu, 2018

机译：超高迁移率层状氧化物半导体Bi2O2Se中的电子结构和异常坚固的带隙
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。
8. Electrochemical and Spectroelectrochemical Analysis of the Oxide / p-INP (p-Indium Phosphide) Semiconductor Surface Using FTIR (Fourier Transform Infrared) and Raman Scattering Spectroscopies [R] . Li, J., Pons, S. 1988

机译：使用FTIR（傅里叶变换红外）和拉曼散射光谱法对氧化物/ p-INp（磷化铟）半导体表面进行电化学和光谱电化学分析

Indium Gallium Oxide Alloys: Electronic Structure Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

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