SEMICONDUCTOR MEMORY DEVICE HAVING A CAPABILITY FOR CONTROLLED ACTIVATION OF SENS AMPLIFIERS

摘要

The semiconductor memory device comprises a memory cell array provided with a plurality of sense amplifiers, a pair of first and second drive line segments 44 _I , 44 _{i + 1} , 45 _I respectively connected to and connected to the plurality of sense amplifiers for driving the sense amplifiers. , 45 _{i + 1} ) and a plurality of segmented drive lines 43 _i , 43 _{i + 1,} respectively, and a plurality of trunks 50 _{(i + 1) / 2} , 51 for supplying power to the segmented drive lines. _{(i + 1) / 2} , 58 _{(i + 1) / 2} , 58 _{(i + 1) / 2} ). Each trunk has a first conductor strip extending from the first side of the memory cell array toward the second side to connect to the plurality of first drive line segments when crossing, and to connect to the plurality of second drive line segments when crossing. And a second conductor strip extending from the second side of the memory cell array toward the first side. The first and second conductor strips have a reduced width W ₂ and mutual; It has a distal end that has a complementary shape and is arranged to form a straight strip having a substantially constant width W ₁ through the memory cell array.