Semiconductor memory device having a capability for controlled activation of sense amplifiers

摘要

A semiconductor memory device includes a memory cell array (42) in which a number of sense amplifiers are provided, a plurality of segmented drive lines (43_i, 43_i+1) each connected to a group of sense amplifiers for driving the same, each of the segmented drive lines being formed of first and second drive line segments (44_i, 44_i+1, 45_i, 45_i+1) forming a pair, and a number of trunks (50_(i+1)/2, 51_(i+1)/2, 58_(i+1)/2, 58_(i+1)/2) for supplying electric power to the segmented drive lines. Each of the trunks includes a first conductor strip extending from a first side of the memory cell array toward a second side for connection to a plurality of the first drive line segments upon crossing the same, and a second conductor strip extending from the second side of the memory cell array toward the first side for connection to a plurality of the second drive line segments upon crossing the same. The first and second conductor strips have distal end parts having a reduced width (W₂) and a mutually complementary shape, such that the first and second conductor strips are disposed to form a straight strip having a substantially constant width (W₁) throughout the memory cell array.