首页> 外国专利> APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, MANUFACTURE OF HSG-POLYCRYSTALLINE SILICON FILM AND MANUFACTURE OF CAPACITOR INCLUDING HSG-POLYCRYSTALLINE SILICON FILM AS ELECTRODE

APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, MANUFACTURE OF HSG-POLYCRYSTALLINE SILICON FILM AND MANUFACTURE OF CAPACITOR INCLUDING HSG-POLYCRYSTALLINE SILICON FILM AS ELECTRODE

机译:用于制造半导体器件的装置,制造HSG-多晶硅树脂膜和制造包括电极的HSG-聚酯硅膜的电容器的装置

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing semiconductor device improved in process uniformity, and method of manufacturing an HSG- polycrystalline Si film and capacitor, including this Si film as an electrode, using the same. ;SOLUTION: The setting position of a wafer holder 220 for mounting a wafer 104 is divided into a wafer loading/unloading position 250, in the order of a stand by position 252 and an in-process position 254 located from the bottom of the apparatus to the top.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种用于制造工艺均匀性得到改善的半导体器件的制造设备,以及使用该设备制造包括该Si膜作为电极的HSG-多晶硅膜和电容器的方法。 ;解决方案:用于安装晶圆104的晶圆支架220的放置位置按从设备底部开始的备用位置252和加工位置254的顺序分为晶圆装载/卸载位置250版权:(C)1999,JPO

著录项

  • 公开/公告号JPH11121698A

    专利类型

  • 公开/公告日1999-04-30

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRON CO LTD;

    申请/专利号JP19980143473

  • 发明设计人 RIN RYUKIN;KA DAIGO;

    申请日1998-05-25

  • 分类号H01L27/04;H01L21/822;H01L21/205;H01L21/28;H01L21/68;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:39

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