THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY, METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY, ELECTRONIC APPARATUS, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR DEPOSITING THIN FILM

摘要

A high performance thin film semiconductor device is fabricated using a low temperature process in which it is possible to use inexpensive glass substrates. A highly crystalline mixed-crystallinity semiconductor film is deposited by means of PECVD using a silane as the source gas and argon as the dilution gas, then the crystallinity of this film is improved by such means as laser irradiation. Thin film semiconductor devices fabricated in this way are used in the manufacture of such things as liquid crystal displays and electronic devices. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits. IMAGE