Memory capacity switching method and semiconductor device to which the method is applied

摘要

Conventionally, there has been a problem that the development period of the semiconductor device is long and the manufacturing cost is also high.;According to the present invention, the control for switching the capacity of the internal memory 2, the capacitance switching signal generating circuit 4 for generating the capacitance switching signal, and the accessible memory based on the capacitance switching signal on one chip. By setting the capacity of the accessible memory in the semiconductor device 1 including the circuit 5 to a value of "0" or "1" of the capacitance switching signal generated from the capacitance switching signal generating circuit 4, The control circuit 5 switches based on the value of the capacitance switching signal.