SILICON OXY-NITRIDE CAP AGAINST FLUORINE SILICATE GLASS FILM WHILE MANUFACTURING DIELECTRIC SEMICONDUCTOR BETWEEN METALS

摘要

PURPOSE: An arrangement of a Fluorine Silicate Glass(FSG) as an Inter Metal Dielectric(IMD) of a semiconductor device is provided to prevent a fluorine material from being diffused to the outside for preventing a metal filling problem without increasing manufacturing cost. CONSTITUTION: A semiconductor device includes; a patterned conductive layer(22); a dielectric liner(23') arranged on the patterned conductive layer; combining units of a fluorine silicate glass layer(24') arranged on the dielectric liner and a silicon oxy-nitride cap layer(25'); the silicon oxy-nitride cap layer being placed upper than the fluorine silicate glass layer for covering; and an additional conductive layer being place upper than the silicon oxy-nitride cap layer for being arranged while conductively connecting to the patterned conductive layer. Therefore, the fluorine material is prevented from being diffused to the outside, and the metal filling problem is prevented while the manufacturing cost is not increased.