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Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

机译：利用氟掺入法在具有高k电介质的砷化镓（半导体）金属氧化物半导体电容器中钝化氧化物陷阱

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Liu L; Choi HW; Lai PT; Xu JP;
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年度 2015
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专利

1. Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation [J] . L. N. Liu, H. W. Choi, J. P. Xu, Applied Physics Letters . 2015,第21期

机译：通过LaTaON钝化层和氟的引入钝化GaAs金属氧化物半导体电容器中的氧化物陷阱和界面态
2. Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO_2 surface passivation [J] . Ruilong Xie, Wei He, Mingbin Yu, Applied Physicsletters . 2008,第7期

机译：掺氟和形成气体退火对GeO_2表面钝化高k栅锗金属氧化物半导体的影响
3. Effect of La incorporation on reliability characteristics of metal-oxide-semiconductor capacitors with hafnium based high-k dielectrics [J] . Tea Wan Kim, Tae-Young Jang, Donghyup Kim, Microelectronic Engineering . 2012,第Jana期

机译：掺镧对含with高k电介质的金属氧化物半导体电容器可靠性特性的影响
4. In-Situ Surface Passivation and Metal-Gate/High-k Dielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors [C] . Hock-Chun Chin, Ming Zhu, Sung-Jin Whang, International Symposium on VLSI Technology, Systems and Applications . 2008

机译：用于N沟道镓砷化物金属氧化物 - 半导体场效应晶体管的原位表面钝化和金属栅/高k电介质叠层形成
5. Investigation of indium aluminum phosphide native oxides for gallium arsenide metal-oxide-semiconductor device applications. [D] . Cao, Ying. 2006

机译：用于砷化镓金属氧化物半导体器件应用的磷化铟铝天然氧化物的研究。
6. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors [O] . Jiangwei Liu, Yasuo Koide 2018

机译：用于金属氧化物半导体电容器和场效应晶体管的氢化金刚石上高k氧化物概述
7. Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation [O] . LIU L, Choi HW, Xu JP, 2015

机译：LaTaON钝化层和氟掺杂对Gaas金属氧化物半导体电容器中氧化物陷阱和界面态的钝化
8. Scanning Photovoltage Investigation of Silicon- and Gallium Arsenide-Based Metal Oxide Semiconductor (MOS) Capacitors [R] . Streever, R. L., Winter, J. J. 1981

机译：基于硅和砷化镓的金属氧化物半导体（mOs）电容器的扫描光电压研究

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

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