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Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

机译：一堆两种氟掺杂氧化硅薄膜与互连金属化的叠加金属金属间电介质应用的互连金属化

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《European Workshop on Materials for Advanced Metallization》|1998年||共4页
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Baud L.; Passermard G.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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4. Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications [C] . Baud L., Passermard G., Institute of Electric and Electronic Engineer European Workshop on Materials for Advanced Metallization . 1998

机译：一堆两种氟掺杂氧化硅薄膜与互连金属化的叠加金属金属间电介质应用的互连金属化
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Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications

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