首页> 外国专利> CIRCUIT FOR CLAMPING GROUND POTENTIAL IN SEMICONDUCTOR DEVICE

CIRCUIT FOR CLAMPING GROUND POTENTIAL IN SEMICONDUCTOR DEVICE

机译:半导体设备中接地电位的钳制电路

摘要

PURPOSE: A clamping circuit is provided to clamp a ground potential supplied for driving a circuit to normally drive the circuit included in a semiconductor device regardless of the bouncing of the ground potential. CONSTITUTION: In a ground potential clamping circuit(500), a chip ground potential(Vss) applied through a chip grounding node(100) is supplied to a bias block(200). When the chip ground potential is bounced, the bias block is turned on for supplying the chip ground potential to the next clamp ground nodes. A reference voltage generating unit(100) generates first/second reference potentials higher/lower than the reference ground potential in response to the activation of a chip selecting signal(/CS). When the potential from the bias block is higher than the first reference potential, the first reference potential is outputted as a clamp ground potential(VSS1). When the potential is lower than the second reference potential, the second reference potential is supplied to an input buffer(600) as the clamp ground potential.
机译:目的:提供一种钳位电路,以钳制提供的用于驱动电路的接地电位,以正常驱动半导体器件中包括的电路,而与接地电位的反弹无关。组成:在地电位钳位电路(500)中,通过芯片接地节点(100)施加的芯片地电位(Vss)被提供给偏置模块(200)。当芯片接地电位反弹时,偏置模块将打开,以将芯片接地电位提供给下一个钳位接地节点。参考电压产生单元(100)响应于芯片选择信号(/ CS)的激活而产生高于/低于参考接地电位的第一/第二参考电位。当来自偏置块的电势高于第一参考电势时,第一参考电势作为钳位接地电势(VSS1)输出。当该电位低于第二参考电位时,将第二参考电位作为钳位接地电位提供给输入缓冲器(600)。

著录项

  • 公开/公告号KR20000044678A

    专利类型

  • 公开/公告日2000-07-15

    原文格式PDF

  • 申请/专利权人 HYUNDAI ELECTRONICS IND. CO. LTD.;

    申请/专利号KR19980061177

  • 发明设计人 JANG SEONG BONG;

    申请日1998-12-30

  • 分类号G11C11/21;

  • 国家 KR

  • 入库时间 2022-08-22 01:45:32

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