A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits

摘要

This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,