The present invention, in the manufacture of integrated circuits, preferably to create a capacitor having a conductive metal electrode in the capacitor itself and the integrated circuit, to a method for high-frequency applications. According to the invention, the lower electrode (17, 63, 67) is produced by depositing a first metal layer 15 on the layer structure (11) comprising a bottom board and the top insulating layer 13. An insulating layer 19 is a first metal layer of the insulating layer 19. Then, the electrical contact 25 on the lower electrode (17, 63, 67) being via hole 21 is plugged with deposited on 15 by etching via holes 21 through is generated. Then, the first metal layer 15 does not covered in the predetermined region 33, then the dielectric layer 35 is deposited, patterned and etched in such a way that overlaps (39) said predetermined area (33). As a result, the upper electrode (47, 63, 67) and the connecting layer 43 has an upper electrode (47, 63, 67) is deposited on the resultant structure (40) overlaps the predetermined region 33, the connecting layer (43 ) is generated on the second metal layer 41 is patterned and etched in such a manner as to overlap with the plugging of the via hole (21).
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