High performance multi-layer metal-insulator-metal capacitors for future integrated circuits

摘要

This paper presents the electrical characteristics of anodically grown multi-layer dielectric stacked MIM capacitors using anodization technique. In this work, we have studied the effects of high-k materials (AlO and TiO) on the device performances of multi-layer capacitors. The fabricated capacitors show a high capacitance density, low leakage current density and low VCC as per the ITRS recommendations and are suitable for future integrated circuits.