Capacitor in an integrated functional block or in an integrated circuit with a large capacitance; a method for the production of the capacitor; and use of the capacitor in the form of an integrated decoupling capacitor

摘要

the present invention relates to a method to facilitate the manufacture of a mos kondensatorstruktur in funktionsblocks or integrated circuits, without additional siliziumoberflu00e4che or any additional process step in the production of the material n a standard mos or bicmos technique required.$a of each block or any cell with entkopplungskondensatoren under the wide metal supply lines without a separate siliziumoberflu00e4che fitted to need. these "buried" under each broad leiterpfad capacitors are provided in or on a chip. $a fig.1 shows a halbleitersubstrat of type p - or n - by the line (10) limited kondensatorstruktur (1) in the form of an h, the surface (12) is plated.in the schenkelu00f6ffnungen is both a metallized surface (15, 16) of a polysiliziumschicht (14) inserted in the cross under a high (12) supporting polysiliziumschicht, isolated by an oxide layer, smoothly.querverbindungslu00f6cher lead to conductive islands of type p + or n +, in the surface of the substrate are implanted and other metallisierungsschichten on other levels. $a capacity of the capacitor is 10 - 12 times larger than the one in the state the technique produced structure.