Process for charging a substrate wafer onto a heated susceptor or a susceptor segment of a deposition reactor with comprises holding the wafer and susceptor or susceptor segment away from each other before contacting them

摘要

Charging a heated susceptor or its segment of a deposition reactor with a substrate wafer on holding device comprises, before contact between substrate wafer and susceptor or its segment, starting a holding position in which wafer and susceptor or its segment are vertically positioned away from each other; and contacting the wafer with susceptor or its segment after a time in holding position. An Independent claim is also included for a device for charging a susceptor or a susceptor segment of a deposition reactor with a substrate wafer lying on a holding device, comprising a lifting cylinder (1) which lifts the susceptor or susceptor segment via a lifting rod (3) and a counter pressure cylinder (2) via which the holding position is adjusted. Preferred Features: The substrate wafer and susceptor or susceptor segment are held in the holding position at a distance of 0.1-100 mm from each other. The time in the holding position is 0.1-100 seconds.