Ultra-shallow junction formation for deep sub-micron complementary metal-oxide-semiconductor

摘要

A semiconductor substrate having an n-well region, a p-well region and shallow trench isolation (STI) regions is provided. Poly-gates are formed over the n-well region and p-well region respectively. First, nitrogen oxide (such as NO, N₂O) layer are formed on surface of the aforesaid structure by furnace or rapid thermal oxidation (RTO). A photoresist layer is formed over the p-well region, and then BF₂ or boron ion implantation is carried out to form a nitrogen oxide (such as NO, N₂O) layer having boron ion in the n-well region. Another photoresist layer is formed over the n-well region after removing the photoresist layer. Arsenic ion implantation is then carried out to form a nitrogen oxide (such as NO, N₂O) layer having arsenic ion in the p-well region. Next, spacer is formed on the sidewall of gates after removing the photoresist layer. Finally, deep source/drain implantation are carried out once again. And then, ultra-shallow junctions are formed in the source/drain regions of Complementary Metal-Oxide-Semiconductor devices by performing one step rapid thermal process.