Substrate voltage generating circuit provided with a transistor having a thin gate oxide film and a semiconductor integrated circuit device provided with the same

摘要

A semiconductor integrated circuit device includes an oscillator generating a clock signal and a charge pump circuit. The charge pump circuit includes capacity elements and an output transistor. The capacity element boosts a voltage on a boost node. The transistor (clamp circuit) clamps the voltage level on the boost node to a constant value. The capacity element controls the gate voltage of the output transistor. The clamp circuit is used to suppress a voltage applied to the transistors and the MOS capacity element, and suppresses generation of hot carriers.