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Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory

机译:使用反熔丝的熔丝电路和在半导体存储器中搜索故障地址的方法

摘要

A fuse circuit comprises first and second electric fuses, a differential amplifier and a switch circuit. The first and second electric fuses have their respective current characteristics changed when a voltage of a predetermined level or more is applied thereto. The differential amplifier receives two voltage signals based on the current characteristics of the first and second electric fuses, outputs a predetermined voltage on the basis of a difference in voltage between the two voltage signals, and amplifies the predetermined voltage. The memory circuit stores an output from the differential amplifier. The switch circuit connects and disconnects the differential amplifier to and from the memory circuit.
机译:熔断器电路包括第一和第二电熔断器,差分放大器和开关电路。当向第一和第二电熔断器施加预定水平或更高的电压时,它们各自的电流特性改变。差分放大器基于第一电熔丝和第二电熔丝的电流特性接收两个电压信号,基于两个电压信号之间的电压差输出预定电压,并放大预定电压。存储器电路存储来自差分放大器的输出。开关电路将差分放大器与存储器电路连接和断开。

著录项

  • 公开/公告号US6430101B1

    专利类型

  • 公开/公告日2002-08-06

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US20010931024

  • 发明设计人 HARUKI TODA;

    申请日2001-08-17

  • 分类号G11C70/00;

  • 国家 US

  • 入库时间 2022-08-22 00:46:43

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