PROBLEM TO BE SOLVED: To produce a silicon single crystal wafer for device in high productivity by CZ process suppressing the formation of crystal defect. ;SOLUTION: The objective silicon single crystal wafer is produced by slicing a silicon single crystal rod doped with nitrogen by CZ process and has a grown-in defect size of ≤70 nm. The single crystal rod to be used in the above process is grown by controlling the cooling rate to ≥2.3°C/min within the temperature range of 1,l50-1,080°C. This process for the production of silicon single crystal wafer comprises the grown of a silicon single crystal rod doped with nitrogen by CZ process while cooling the rod at a cooling rate controlled to ≥2.3°C at 1,150-1,080°C and the slicing of the single crystal rod in the form of wafers.;COPYRIGHT: (C)1999,JPO
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