COMPARATIVE ANALYSIS OF SLURRY AND DIAMOND SAWING METHODS USING RAMAN SPECTROSCOPY ON MONOCRYSTALLINE SILICON WAFERS

摘要

In this work, we present an analysis of the surface and bulk properties of PV wafers cut with slurry anddiamond wire saws. Combining structural and spectroscopic analyzes, we compare both sawing methods based on thewafer topography and the saw-induced subsurface damage characteristics. The characterization procedure developed inthis study allows understanding the impact of the abrasion mechanism on the wafer surface and subsurface properties.This work allowed us showing that the diamond-wire based sawing method induces a smoother wafer surface andshallower subsurface damage than the slurry-based sawing technique.