Process and CMOS compatible MEM switches

摘要

(57) with the processing standard steps for producing a multilayer metal integrated circuits such as CMOS, [Abstract] micro-electro-mechanical (MEM) switch, is produced at low cost. The exact steps, it can be adjusted to match the process of foundry particular, as a result, devices can be integrated easily with other circuits, and low-cost can be obtained. A metal plug that is usually used as a via to connect the metal layer separated by a dielectric layer, the processing step includes making contacts MEM switches. It is formed on both sides of the sacrificial metallization region, then the interconnect metallization is removed from between the contacts via the contact vias such a state that separated the contact vias. The contacts so as to project toward each other, a dielectric surrounding the contacts are etched back. In this way, by activating the MEM switches, when the contact moves towards each other, and firmly connected without interference contact. To form a via in a CMOS process, tungsten is used as a standard, it is a contact material with excellent, it can be used as a contact also via other metals. The interconnect metallization can be used for the request and interconnect on the structural demands of other MEM switches, of which are standard processes and foundries are preferably used. Can be used to make a switch to dielectric materials and various metals, but in a preferred embodiment, interconnect metal layer is aluminum and the dielectric material is SiO _2, 4-layer CMOS manufacturing standard It is a material that conforms fully to the process.