Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

摘要

A double photodiode(PD) constructed by p^+/N-well junction and N-well/p-sub junction was designed and fabricated in a UMC 0.18-lm CMOS process. Based on the device structure and mechanism of double PD, a novel small-signal equivalent circuit model considering the carrier transit effect and the parasitic RC time constant was presented. By this model with complete electronic components, the double PD can be incorporated in a commercial circuit simulator. The component values were extracted by fitting the measured S-parameters using simulated annealing algorithm, and a good agreement between the measurement and the simulation results was achieved.