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IMPROVED ENHANCEMENT OF P-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
IMPROVED ENHANCEMENT OF P-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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机译:改进的P型金属氧化物半导体激光器场效应晶体管的增强
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摘要
A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.
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