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METHOD FOR PREPARING THIN GOLD FILM FLAT AT ATOMIC LEVEL

机译:原子级薄金膜的制备方法

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing a thin gold film flat at the atomic level on a mica substrate by a vacuum deposition method with a simple operation.;SOLUTION: The problem is solved by investigating the pretreatment method for a mica substrate and the conditions such as degree of vacuum, vapor deposition temperature, vapor deposition rate, and film thickness in the vacuum deposition method. The thin gold film is formed by the following operations: an 8 mm×12 mm mica substrate with its surface cleaved in the air is heat treated in a vacuum of 1-8×10-6 Torr at 550°C for 2 hr and then kept at 473°C in a vacuum of 1-3×10-6 Torr; and a thin gold film with a thickness of 150 nm is vapor deposited at a vapor deposition rate of 2.0 nm/s and then cooled in a vacuum of 1-3×10-6 Torr to lower than 100°C.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种通过真空沉积法以简单的操作在云母基板上制备原子级平面的金薄膜的方法;解决方案:通过研究云母基板的预处理方法解决了该问题。真空蒸镀法中的真空度,蒸镀温度,蒸镀速度,膜厚等条件。通过以下操作形成金薄膜:在空气中以1-8倍10 -6 Torr在550°C的真空下对其表面在空气中裂解的8 mm×12 mm云母衬底进行热处理。 ;在室温下保持2小时,然后在1-3×10 -6 Torr的真空中保持在473℃。然后以2.0 nm / s的气相沉积速率气相沉积厚度为150 nm的金薄膜,然后在1-3×10 -6 Torr的真空中冷却至低于100°C ; C .;版权:(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004149818A

    专利类型

  • 公开/公告日2004-05-27

    原文格式PDF

  • 申请/专利权人 HIGO MORIHIDE;

    申请/专利号JP20020313636

  • 发明设计人 HIGO MORIHIDE;

    申请日2002-10-29

  • 分类号C23C14/14;C23C14/24;G01N13/10;G02B5/08;

  • 国家 JP

  • 入库时间 2022-08-21 23:33:03

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