And a method of manufacturing the oxide thin film ferroelectric thin film, or metal thin film, electronic and electrical devices using the thin film as well as manufacturing equipment

摘要

An object of the present invention is to provide a ferroelectric thin film having a bismuth layered crystal structure with high reliability and having an optimal composition range provide good residual polarization characteristics. Is a layered crystal structure, including the oxygen (O) and tantalum at least one strontium and carbon and bismuth (Sr) and (Bi), tantalum (Ta) and niobium (Nb), the ferroelectric thin film of the present invention, the composition _Sr x _Bi y or SrBi y _Ta 2 O _{9 ± d (Ta, Nb)} 2 O _{9 ± d} however _(, 0.90 ≦ x 1.00,1.70 y ≦ 3.20,0, the expression ≦ wherein to be d ≦ 1.00), and carbon content of 5at% or less